Predicting the effects of plasma-induced damage on p–n junction leakage and its application in the characterization of defect distribution

Understanding the effects of defect creation during plasma exposure is crucial for designing future ultra-low leakage current devices. Created defects play a role as carrier conduction paths, leading to an increase in p–n junction (ΔJpn). Herein, we propose model focusing on created ΔJpn combination with technology computer-aided design simulations. Three different spatial distributions, ndam(x), (linear, exponential, and Gaussian) were implemented predicting under various operating conditions. It was confirmed that strongly dependent addition total number generally accepted energy levels. The prediction experimentally assign profile by emerging mechanism—lateral straggling incident ions—under fluorocarbon-containing exposure, which commonly employed electrical contact opening steps. Devices lateral widths areas exposed plasma. experimental results revealed direction exponential. proposed scheme useful processes circuit layouts realize